Dr. Harufusa Kondo

Dr. Harufusa Kondo
Mitsubishi Electric Corp. Power Device Works
Senior Technical Advisor
Title: Advancement of Power chip and module technology

Abstract: Mitsubishi Electric Corp. has long experience of innovative power devices. This speech will cover brief history and latest advancement of our power devices, which includes Si-IGBT and SiC chip technology. It also describes power devices for such application as industry, railway/power, white goods, and automotive.


Biography: Harufusa Kondo received the B.S., M.S., and Ph.D. degrees from Osaka University, JAPAN.  In 1985, he joined the LSI R&D Laboratory, Mitsubishi Electric Corporation, where he had been engaged in the design of system VLSI’s for digital communication. In 2003, he moved to the Optical and High-frequency Device Works as a manager of Optical Transceiver. Since 2009, he has been working at Power Device Works for the development of DIPIPM™, Industrial IGBT modules, and high-voltage modules for railway application including SiC.  He is currently the Senior Technical Advisor at Power Device Works, Mitsubishi Electric Corporation.

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