Charles Zha
VP & GM of Navitas China
Navitas Semiconductor Ltd.
Title: The Impact of GaN and SiC on Sustainability

Abstract: As wide bandgap GaN and SiC take market share from legacy silicon, the new target applications are higher power and also higher voltage. For example, now that GaN power ICs dominate ultra-fast charging mobile designs, Navitas’ 4th generation GaNSafe power ICs enter high-power motor drive, AI data center, solar and EV applications. For SiC, as EV charging increases from 22 kW to 350 kW, and now up to 3.75 MW, application bus voltages have increased from 400 V to 800 V, and on to 1,250 V. At the same time, power density is critical – so high speed (high switching frequency) is required from both GaN and SiC to minimize passive components.
Navitas GaN and SiC technologies, from 650 V to 6,500 V operate efficiently and reliably at high speeds, for applications from 20 W to 20 MW.

Biography: Charles (Yingjie) Zha comes to Navitas with over 14 years of sales and marketing experience in international semiconductor companies. Prior to Navitas, Charles worked for Fairchild and ON Semiconductor, where he managed the mobile phone and wireless business unit in Greater China, reaching over $350M in revenue.
Charles has grown the Navitas China team at a very fast rate, established offices in Shenzhen, Hangzhou and Shanghai, and he is very well regarded for his business and investor relationships.
Charles holds both Master and Bachelor Degrees from Jiangsu University.