Harufusa Kondo Senior Director
Mitsubishi Electric Corporation
Title: Advancement of Power chip and module technology

Abstract: Mitsubishi Electric Corp. has long experience of innovative power devices. This speech will cover latest advancement of our power chips including Si-IGBT and SiC MOSFET. It also describes power modules for such applications like renewables, railway/power, white goods, and automotive.

Biography: Dr. Kondo received the B.S., M.S., and Ph.D. degrees from Osaka University, JAPAN.  
In 1985, he joined Mitsubishi Electric Corporation. In her LSI R&D Laboratory, he had been engaged in the design of large-scale chips for digital communication.  
In 2003, he moved to the Optical and High-frequency Device Works, where he had been worked on high-speed Optical Transceiver development.
Since 2009, he has been working at Power Device Works for the development of DIPIPM™, Industrial modules, and high-voltage modules including silicon IGBT and SiC MOSFET.  
He is currently the Senior Technical Advisor at Power Device Works, Mitsubishi Electric Corporation.